Mu, Fengwen : rechercher sur Z-Library

Campagne de collecte 15 septembre 2024 – 1 octobre 2024 C'est quoi, la collecte de fonds?

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Campagne de collecte 15 septembre 2024 – 1 octobre 2024

Z-Library est une des plus grandes bibliothèques en ligne dans le monde, avec le stockage de plus de 17,000,000 livres et plus de 84,837,000 articles. Nous encourageons l'accès libre de chacun à la littérature. Aujourd'hui (15 septembre 2024) nous faisons un appel de fonds à tous ceux qui veulent contribuer encore plus au soutien et au développement de notre projet.

Les téléchargements SANS LIMITE sont aussi (au cours de 31 jours après la date de don) disponibles pour TOUS les utilisateurs qui soient en mesure de soutenir le projet pendant la période de collecte de fonds jusqu'au 1 octobre 2024.

C'est quoi, la collecte de fonds?En savoir plus

Livres
Articles (54)
Les plus populaires
Liste
- Liste
- Tableau

1

Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor

Mu, Fengwen, Xu, Yang, Shin, Seongbin, Wang, Yinghui, Xu, Hengyu, Shang, Haiping, Sun, Yechao, Yue, Lei, Tsuyuki, Tatsurou, Suga, Tadatomo, Wang, Weibing, Chen, Dapeng

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 2.08 MB

english, 2019

2

[IEEE 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2014.7.15-2014.7.16)] 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - SiC wafer bonding by modified suface activated bonding method

Mu, Fengwen, Suga, Tadatomo, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Année:

2014

Langue:

english

Fichier:

PDF, 747 KB

english, 2014

3

[IEEE 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2017.5.16-2017.5.18)] 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Room temperature SiC-SiC direct wafer bonding by SAB methods

Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

Année:

2017

Langue:

english

Fichier:

PDF, 223 KB

english, 2017

4

[IEEE High Density Packaging (ICEPT-HDP) - Shanghai, China (2011.08.8-2011.08.11)] 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging - Large-scale synthesis of Ag nanoparticles by polyol process for low temperature bonding application

Yan, Jianfeng, Zou, Guisheng, Wang, Xiaoyu, Bai, Hailin, Mu, Fengwen, Wu, Aiping

Année:

2011

Langue:

english

Fichier:

PDF, 3.23 MB

english, 2011

5

[IEEE High Density Packaging (ICEPT-HDP) - Shanghai, China (2011.08.8-2011.08.11)] 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging - A study on the low temperature sintering-bonding through in-situ formation of Ag nanoparticles using Ag2O microparticles

Mu, Fengwen, Zou, Guisheng, Yan, Jianfeng, Bai, Hailin, Wu, Aiping

Année:

2011

Langue:

english

Fichier:

PDF, 6.13 MB

english, 2011

6

Silicon carbide wafer bonding by modified surface activated bonding method

Suga, Tadatomo, Mu, Fengwen, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Journal:

Japanese Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2015

7

GaN-Si Direct Wafer Bonding at Room Temperature for Thin GaN Device Transfer after Epitaxial Lift Off

Mu, Fengwen, Morino, Yuki, Jerchel, Kathleen, Fujino, Masahisa, Suga, Tadatomo

Journal:

Applied Surface Science

Année:

2017

Langue:

english

Fichier:

PDF, 2.71 MB

english, 2017

8

Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Mu, Fengwen, He, Ran, Suga, Tadatomo

Journal:

Scripta Materialia

Année:

2018

Langue:

english

Fichier:

PDF, 2.29 MB

english, 2018

9

De-bondable SiC-SiC wafer bonding via an intermediate Ni nano-film

Mu, Fengwen, Uomoto, Miyuki, Shimatsu, Takehito, Wang, Yinghui, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Higurashi, Eiji, Suga, Tadatomo

Journal:

Applied Surface Science

Année:

2018

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2018

10

[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai, China (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Room temperature GaN bonding by surface activated bonding methods

Mu, Fengwen, Suga, Tadatomo

Année:

2018

Langue:

english

Fichier:

PDF, 7.53 MB

english, 2018

11

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Low temperature all-Cu bonding via Cu-nanoparticle paste sintering in Pt-catalyzed formic acid vapor

Mu, Fengwen, Ren, Hui, Shin, Seongbin, Masatake, Akaike, Liu, Lei, Zou, Guisheng, Makoto, Yoshida, Suga, Tadatomo

Année:

2019

Langue:

english

Fichier:

PDF, 164 KB

english, 2019

12

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - The integration of Ga 2 O 3 on SiC at room temperature by surface activated bonding method

Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Suga, Tadatomo

Année:

2019

Langue:

english

Fichier:

PDF, 480 KB

english, 2019

13

A reddish orange-emitting stoichiometric phosphor K3Eu(PO4)2 for white light-emitting diodes

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Optics & Laser Technology

Année:

2012

Langue:

english

Fichier:

PDF, 411 KB

english, 2012

14

A red-emitting heavy doped phosphor Li6Y(BO3)3:Eu3+ for white light-emitting diodes

Guifang Ju, Yihua Hu, Haoyi Wu, Zhongfu Yang, Chujun Fu, Zhongfei Mu, Fengwen Kang

Journal:

Optical Materials

Année:

2011

Langue:

english

Fichier:

PDF, 494 KB

english, 2011

15

The structure and luminescence properties of a novel orange emitting phosphor Y3MnxAl5−2xSixO12

Zhongfei Mu, Yihua Hu, Haoyi Wu, Chujun Fu, Fengwen Kang

Journal:

Physica B: Condensed Matter

Année:

2011

Langue:

english

Fichier:

PDF, 445 KB

english, 2011

16

The structure and luminescence properties of long afterglow phosphor Y3−xMnxAl5−xSixO12

Zhongfei Mu, Yihua Hu, Yinhai Wang, Haoyi Wu, Chujun Fu, Fengwen Kang

Journal:

Journal of Luminescence

Année:

2011

Langue:

english

Fichier:

PDF, 472 KB

english, 2011

17

The luminescence of bismuth and europium in Ca4YO(BO3)3

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Journal of Luminescence

Année:

2012

Langue:

english

Fichier:

PDF, 700 KB

english, 2012

18

Luminescence and red long afterglow investigation of Eu3+–Sm3+ CO-doped CaWO4 phosphor

Fengwen Kang, Yihua Hu, Haoyi Wu, Zhongfei Mu, Guifang Ju, Chujun Fu, Nana Li

Journal:

Journal of Luminescence

Année:

2012

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2012

19

Luminescence properties of Y2O3:Bi3+, Ln3+ (Ln=Sm, Eu, Dy, Er, Ho) and the sensitization of Ln3+ by Bi3+

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Journal of Luminescence

Année:

2012

Langue:

english

Fichier:

PDF, 597 KB

english, 2012

20

Observation on long afterglow of Tb3+ in CaWO4

Haoyi Wu, Yihua Hu, Fengwen Kang, Li Chen, Xiaojuan Wang, Guifang Ju, Zhongfei Mu

Journal:

Materials Research Bulletin

Année:

2011

Langue:

english

Fichier:

PDF, 456 KB

english, 2011

21

Luminescence investigation of Eu3+-Bi3+ co-doped CaMoO4 phosphor

Fengwen KANG, Yihua HU, Haoyi WU, Guifang JU, Zhongfei MU, Nana LI

Journal:

Journal of Rare Earths

Année:

2011

Langue:

english

Fichier:

PDF, 911 KB

english, 2011

22

Luminescent Properties of Praseodymium in CaWO4 Matrix

Haoyi Wu, Yihua Hu, Fengwen Kang, Nana Li, Guifang Ju, Zhongfei Mu, Zhongfu Yang

Journal:

Journal of the American Ceramic Society

Année:

2012

Langue:

english

Fichier:

PDF, 893 KB

english, 2012

23

Luminescent properties of Na3Gd1−xEux(PO4)2 and energy transfer in these phosphors

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Journal of Alloys and Compounds

Année:

2011

Langue:

english

Fichier:

PDF, 483 KB

english, 2011

24

Luminescence and energy transfer of Mn2+ and Tb3+ in Y3Al5O12 phosphors

Zhongfei Mu, Yihua Hu, Haoyi Wu, Chujun Fu, Fengwen Kang

Journal:

Journal of Alloys and Compounds

Année:

2011

Langue:

english

Fichier:

PDF, 444 KB

english, 2011

25

Enhancement of red fluorescence and afterglow in CaWO4:Eu3+ by addition of MoO3

Kang, Fengwen, Hu, Yihua, Wu, Haoyi, Ju, Guifang, Mu, Zhongfei, Li, Nana

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2013

26

White-Light Generation and Energy Transfer in Y2O3:Bi,Eu Phosphor for Ultraviolet Light-Emitting Diodes

Ju, Guifang, Hu, Yihua, Chen, Li, Wang, Xiaojuan, Mu, Zhongfei, Wu, Haoyi, Kang, Fengwen

Journal:

Journal of The Electrochemical Society

Année:

2011

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2011

27

[IEEE 2014 International Conference on Electronics Packaging (ICEP) - Toyama, Japan (2014.4.23-2014.4.25)] 2014 International Conference on Electronics Packaging (ICEP) - Direct bonding of SiC by the suface activated bonding method

Suga, Tadatomo, Fengwen Mu,, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Année:

2014

Langue:

english

Fichier:

PDF, 2.10 MB

english, 2014

28

[IEEE 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC) - Kyoto, Japan (2015.4.14-2015.4.17)] 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC) - Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Mu, Fengwen, Fujino, Masahisa, Suga, Tadatomo, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Année:

2015

Langue:

english

Fichier:

PDF, 2.14 MB

english, 2015

29

A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, He, Ran, Suga, Tadatomo

Journal:

Applied Physics Express

Année:

2016

Langue:

english

Fichier:

PDF, 917 KB

english, 2016

30

Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer

Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

Journal:

Japanese Journal of Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 1.36 MB

english, 2016

31

Mechanism of Low Temperature Sintering-Bonding through In-Situ Formation of Silver Nanoparticles Using Silver Oxide Microparticles

Mu, Fengwen, Zhao, Zhenyu, Zou, Guisheng, Bai, Hailin, Wu, Aiping, Liu, Lei, Zhang, Dongyue, Norman Zhou, Y.

Journal:

MATERIALS TRANSACTIONS

Année:

2013

Langue:

english

Fichier:

PDF, 3.52 MB

english, 2013

32

Single crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high temperature electronics and bio applications

Phan, Hoang-Phuong, Cheng, Han-Hao, Dinh, Toan Khac, Wood, Barry, Nguyen, Tuan-Khoa, Mu, Fengwen, Kamble, Harshad, Vadivelu, Raja, Walker, Glenn, Hold, Leonie, Iacopi, Alan, Haylock, Ben, Dao, Dzung V

Journal:

ACS Applied Materials & Interfaces

Année:

2017

Langue:

english

Fichier:

PDF, 1.77 MB

english, 2017

33

[IEEE 2017 18th International Conference on Electronic Packaging Technology (ICEPT) - Harbin, China (2017.8.16-2017.8.19)] 2017 18th International Conference on Electronic Packaging Technology (ICEPT) - SiC wafer bonding using surface activation method for power device

Mu, Fengwen, Fujino, Masahisa, Suga, Tadatomo, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu

Année:

2017

Langue:

english

Fichier:

PDF, 4.52 MB

english, 2017

34

Application of atomic simulation methods on the study of graphene nanostructure fabrication by particle beam irradiation: A review

Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

Journal:

Computational Materials Science

Année:

2018

Langue:

english

Fichier:

PDF, 2.08 MB

english, 2018

35

Graphene and Graphene-Based Nanomaterials for DNA Detection: A Review

Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

Journal:

Année:

2018

Fichier:

PDF, 2.73 MB

2018

36

Graphene and Graphene-Based Nanomaterials for DNA Detection: A Review

Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 2.73 MB

english, 2018

37

Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices

Mu, Fengwen, Wang, Yinghui, He, Ran, Suga, Tadatomo

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2018

38

(Invited) Room Temperature Wafer Bonding of Wide Bandgap Semiconductors

Mu, Fengwen, Wang, Yinghui, Suga, Tadatomo

Journal:

ECS Transactions

Année:

2018

Langue:

english

Fichier:

PDF, 5.26 MB

english, 2018

39

Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Dinh, Toan, Cheng, Han-Hao, Mu, Fengwen, Iacopi, Alan, Hold, Leonie, Dao, Dzung Viet, Suga, Tadatomo, Senesky, Debbie G., Nguyen, Nam-Trung

Journal:

physica status solidi (a)

Année:

2018

Langue:

english

Fichier:

PDF, 664 KB

english, 2018

40

Direct wafer bonding of Ga2O3–SiC at room temperature

Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Ou, Xin, Suga, Tadatomo

Journal:

Ceramics International

Année:

2018

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2018

41

[IEEE 2018 7th Electronic System-Integration Technology Conference (ESTC) - Dresden, Germany (2018.9.18-2018.9.21)] 2018 7th Electronic System-Integration Technology Conference (ESTC) - Surface Activated Bonding Method for Low Temperature Bonding

Suga, Tadatomo, Mu, Fengwen

Année:

2018

Langue:

english

Fichier:

PDF, 2.08 MB

english, 2018

42

Low temperature Cu bonding with large tolerance of surface oxidation

Ren, Hui, Mu, Fengwen, Shin, Seongbin, Liu, Lei, Zou, Guisheng, Suga, Tadatomo

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 2.36 MB

english, 2019

43

Recent progress in the synthesis of graphene/CNT composites and the energy-related applications

Wu, Xin, Mu, Fengwen, Zhao, Haiyan

Journal:

Journal of Materials Science & Technology

Année:

2019

Langue:

english

Fichier:

PDF, 6.14 MB

english, 2019

44

High Thermal Boundary Conductance across Heterogeneous GaN-SiC Bonded Interfaces

Mu, Fengwen, Cheng, Zhe, Shi, Jingjing, Shin, Seongbin, Xu, Bin, Shiomi, Junichiro, Graham, Samuel, Suga, Tadatomo

Journal:

ACS Applied Materials & Interfaces

Année:

2019

Langue:

english

Fichier:

PDF, 1.60 MB

english, 2019

45

[IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Temporary SiC-SiC Wafer Bonding Compatible with High Temperature Annealing

Mu, Fengwen, Suga, Tadatomo, Uomoto, Miyuki, Shimatsu, Takehito

Année:

2019

Langue:

english

Fichier:

PDF, 2.13 MB

english, 2019

46

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °C

Mu, Fengwen, Suga, Tadatomo, Uomoto, Miyuki, Shimatsu, Takehito, Iguchi, Kenichi, Nakazawa, Haruo

Année:

2019

Langue:

english

Fichier:

PDF, 217 KB

english, 2019

47

Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices

Cheng, Zhe, Mu, Fengwen, Yates, Luke, Suga, Tadatomo, Graham, Samuel

Journal:

ACS Applied Materials & Interfaces

Année:

2020

Langue:

english

Fichier:

PDF, 895 KB

english, 2020

48

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - First Demonstration of Waferscale Heterogeneous Integration of Ga 2 O 3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Xu, Wenhui, Zhang, Yuhao, Hao, Yue, Wang, Xi, Wang, Yibo, You, Tiangui, Ou, Xin, Han, Genquan, Hu, Haodong, Zhang, Shibin, Mu, Fengwen, Suga, Tadatomo

Année:

2019

Fichier:

PDF, 1.21 MB

2019

49

Robust Ag-Cu Sintering Bonding at 160 Â°C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor

He, Liangliang, Li, Junlong, Wu, Xin, Mu, Fengwen, Wang, Yinghui, Lu, Yangting, Suga, Tadatomo

Journal:

Année:

2020

Fichier:

PDF, 3.11 MB

2020

50

Î²-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

Wang, YiBo, Xu, WenHui, You, TianGui, Mu, FengWen, Hu, HaoDong, Liu, Yan, Huang, Hao, Suga, Tadatomo, Han, GenQuan, Ou, Xin, Hao, Yue

Journal:

SCIENCE CHINA Physics, Mechanics & Astronomy

Année:

2020

Fichier:

PDF, 859 KB

2020